Ion Implantation into Nonconventional GaN Structures

Enhanced wet etching of patterned GaN with ion implantation.

We present the enhanced wet etching of GaN epilayer implanted with Au+ ion. Patterned GaN with 2 microm-wide sink-like strips was achieved by using 500 keV Au+ ion implantation and KOH etching. The Dependence of etching depth on etching time for the implantation at different ion fluences was investigated. The experiment showed that the damaged GaN area could be almost etched out at high ion flu...

Neon and Manganese Ion Implantation into AlInN

A Computationally Efficient Model for Three- dimensional Monte Carlo Simulation of Ion Implantation into Complex Structures

A new three-dimensional Monte Carlo simulator has been developed based on UT-MARLOWE. Unbalanced Octree algorithm was used for spatial decomposition. A new trajectory replication scheme was developed and implemented to enhance computational efficiency. More than two orders of magnitude savings on CPU time have been achieved.

Monte Carlo simulation of ion implantation into two- and three-dimensional structures

Until now, Monte Carlo simulation of ion implantation into 3D-structures has been prohibited by the huge amount of CPU-time required. In this paper a method is presented which makes 3D-simulations with simple geometries feasible as well as 2D-simulations with arbitrary geometries. The method is applied to the sidewall doping of trenches.

Fabrication of GaN-based Photonic Crystal Structures by Reactive Ion Etching 87 Fabrication of GaN-based Photonic Crystal Structures by Reactive Ion Etching

The fabrication of the 2D GaN-based photonic crystal structure at optical scales, a subμm scale in our case is very challenging. In our work, a double-etching method proved to be feasible to achieve the periodic GaN/air variation. The pattern was defined in a PMMA resist by electron-beam lithography and transferred to SiO2 by reactive ion etching (RIE) in a CF4 plasma and further into GaN by RI...